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IRFZ44N N-Channel Power MOSFET 49A 55V TO-220

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  • N-Channel Enhancement Mode Power MOSFET with 55V VDS and 49A continuous drain current
  • Low ON-state resistance (0.0175Ω typical) for efficient high-current switching applications
  • Fast switching performance ideal for PWM motor control, LED dimmers, and power supplies
  • Robust TO-220 package with excellent heat dissipation for industrial and hobbyist projects
  • Compatible with Arduino, ESP32, STM32, and Raspberry Pi for microcontroller-based power control
  • Perfect for motor drivers, battery management systems, inverters, and robotics applications
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The IRFZ44N N-Channel Power MOSFET is a high-efficiency power transistor designed for fast switching and high-current applications. Featuring a 55V Drain-to-Source Voltage (VDS) rating and a 49A Continuous Drain Current (ID) capability, this MOSFET is widely used in motor drivers, power supplies, battery management systems, inverters, LED dimmers, robotics, and microcontroller-based switching circuits.

The IRFZ44N utilizes N-Channel Enhancement Mode technology, offering low ON-state resistance and excellent switching performance. Its rugged TO-220 package ensures effective heat dissipation, making it suitable for both hobbyist and industrial power control applications.

Key Features of IRFZ44N Power MOSFET

  • N-Channel Enhancement Mode MOSFET
  • High Current Capacity: Up to 49A
  • Drain-to-Source Voltage Rating: 55V
  • Low ON-State Resistance for efficient operation
  • Fast Switching Performance
  • High Power Dissipation Capability
  • Suitable for PWM and switching applications
  • Robust TO-220 Through-Hole Package
  • Easy interfacing with Arduino, ESP32, STM32, and Raspberry Pi projects
  • Ideal for motor control and power management systems

Technical Specifications

  • Product Type: Power MOSFET
  • Model: IRFZ44N
  • MOSFET Type: N-Channel Enhancement Mode
  • Package Type: TO-220
  • Drain-to-Source Voltage (VDS): 55V
  • Continuous Drain Current (ID): 49A
  • Pulsed Drain Current (IDM): Up to 160A
  • Gate-to-Source Voltage (VGS): ±20V
  • Drain-Source ON Resistance (RDS(on)): Typically 0.0175Ω
  • Power Dissipation (PD): Up to 94W
  • Rise Time: Fast Switching Characteristics
  • Mounting Type: Through-Hole
  • Operating Temperature Range: -55°C to +175°C

Pin Configuration and Layout

The IRFZ44N consists of three terminals:

  • Gate (G) – Controls switching operation
  • Drain (D) – Connects to the load
  • Source (S) – Connects to ground or return path

TO-220 Package Pinout

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Note: The metal mounting tab is electrically connected to the Drain terminal.

Working Principle of N-Channel MOSFET

The IRFZ44N functions as a voltage-controlled electronic switch. When a sufficient voltage is applied between the Gate and Source terminals, the MOSFET turns ON and allows current to flow from Drain to Source. Removing the gate voltage turns the MOSFET OFF, stopping current flow.

Its low RDS(on) minimizes power losses, making it highly efficient for switching and power control applications. The N-Channel enhancement mode design ensures the MOSFET remains OFF when no gate voltage is applied, providing safe default operation.

Applications of IRFZ44N MOSFET

  • DC Motor Drivers
  • PWM Motor Speed Controllers
  • Arduino and ESP32 Power Switching
  • LED Dimmers and Lighting Control
  • Battery Management Systems (BMS)
  • Solar Power Projects
  • Switching Power Supplies (SMPS)
  • Inverter Circuits
  • Robotics and Automation Projects
  • High-Current Electronic Switching
  • Power Distribution and Load Management
  • Solenoid and Relay Control Circuits

Advantages of Using IRFZ44N

  • High current handling capability up to 49A continuous
  • Low conduction losses due to minimal ON-resistance
  • Fast switching speed for efficient PWM operation
  • High efficiency operation reduces heat generation
  • Easy microcontroller interfacing with standard logic levels
  • Durable TO-220 package with excellent thermal characteristics
  • Suitable for both hobby and industrial applications
  • Wide operating temperature range from -55°C to +175°C
  • Cost-effective solution for power switching needs

Usage Tips and Best Practices

  • Use a heatsink for high-current applications to maintain optimal operating temperature.
  • Add a gate resistor (typically 100-470Ω) to protect microcontroller outputs.
  • Always use a flyback diode when driving motors, relays, or other inductive loads.
  • Ensure adequate gate voltage (10-12V recommended) for complete MOSFET switching.
  • Avoid exceeding the maximum voltage and current ratings to prevent damage.
  • Use thick PCB traces or appropriate wiring for high-current circuits to minimize voltage drop.
  • Consider pull-down resistor on gate terminal to ensure MOSFET stays OFF during power-up.
  • Apply thermal paste when mounting to heatsink for improved heat transfer.

Why Choose IRFZ44N for Your Projects

The IRFZ44N N-Channel Power MOSFET stands out as an industry-standard component for high-current switching applications. Its combination of low ON-resistance, high current capability, and fast switching makes it ideal for both DIY electronics enthusiasts and professional engineers. Whether you’re building a motor controller, designing a power supply, or creating advanced robotics projects, the IRFZ44N delivers reliable performance and excellent efficiency.

The TO-220 package format ensures easy integration into your circuits with through-hole mounting, while the widespread availability and affordable price point make it a go-to choice for power management solutions worldwide.

Note: Images are for Illustration Purposes Only.

Category:
College Road Electronics

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Vendor Information

  • Store Name: College Road Electronics
  • Vendor: College Road Electronics
  • Address: Microwave Electronics, Basement Azhar Shaheed Plaza, DAV College Road
    Rawalpindi
    Punjab
    46000
  • 4.80 rating from 570 reviews
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